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K4M56323PG-FE90T vs K4M56323PG-FG90 feature comparison

K4M56323PG-FE90T Samsung Semiconductor

Buy Now Datasheet

K4M56323PG-FG90 Samsung Semiconductor

Buy Now Datasheet
Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Package Description FBGA, BGA90,9X15,32 FBGA, BGA90,9X15,32
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Time-Max 7 ns 7 ns
Clock Frequency-Max (fCLK) 111 MHz 111 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code R-PBGA-B90 R-PBGA-B90
Memory Density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Moisture Sensitivity Level 1 1
Number of Terminals 90 90
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Organization 8MX32 8MX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA FBGA
Package Equivalence Code BGA90,9X15,32 BGA90,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.0003 A 0.0003 A
Supply Current-Max 0.14 mA 0.14 mA
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 3
Memory » DRAMs
Memory » DRAMs

Compare K4M56323PG-FE90T with alternatives

Compare K4M56323PG-FG90 with alternatives