K4M56323PG-FE90T
vs
K4M56323PG-HG90
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
FBGA, BGA90,9X15,32
|
FBGA, BGA90,9X15,32
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.24
|
8542.32.00.24
|
| Access Time-Max |
7 ns
|
7 ns
|
| Clock Frequency-Max (fCLK) |
111 MHz
|
111 MHz
|
| I/O Type |
COMMON
|
COMMON
|
| Interleaved Burst Length |
1,2,4,8
|
1,2,4,8
|
| JESD-30 Code |
R-PBGA-B90
|
R-PBGA-B90
|
| Memory Density |
268435456 bit
|
268435456 bit
|
| Memory IC Type |
SYNCHRONOUS DRAM
|
SYNCHRONOUS DRAM
|
| Memory Width |
32
|
32
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Terminals |
90
|
90
|
| Number of Words |
8388608 words
|
8388608 words
|
| Number of Words Code |
8000000
|
8000000
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-25 °C
|
-25 °C
|
| Organization |
8MX32
|
8MX32
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
FBGA
|
FBGA
|
| Package Equivalence Code |
BGA90,9X15,32
|
BGA90,9X15,32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, FINE PITCH
|
GRID ARRAY, FINE PITCH
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
4096
|
4096
|
| Sequential Burst Length |
1,2,4,8,FP
|
1,2,4,8,FP
|
| Standby Current-Max |
0.0003 A
|
0.0003 A
|
| Supply Current-Max |
0.14 mA
|
0.14 mA
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
OTHER
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e3
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare K4M56323PG-FE90T with alternatives
Compare K4M56323PG-HG90 with alternatives