K4H511638J-BLB3T
vs
MT46V32M16FN-6L:D
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
MICRON TECHNOLOGY INC
|
| Package Description |
BGA, BGA60,9X12,40/32
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.28
|
8542.32.00.28
|
| Access Time-Max |
0.7 ns
|
0.7 ns
|
| Clock Frequency-Max (fCLK) |
166 MHz
|
166 MHz
|
| I/O Type |
COMMON
|
COMMON
|
| Interleaved Burst Length |
2,4,8
|
2,4,8
|
| JESD-30 Code |
R-PBGA-B60
|
R-PBGA-B60
|
| JESD-609 Code |
e3
|
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
DDR1 DRAM
|
DDR1 DRAM
|
| Memory Width |
16
|
16
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Terminals |
60
|
60
|
| Number of Words |
33554432 words
|
33554432 words
|
| Number of Words Code |
32000000
|
32000000
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
32MX16
|
32MX16
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
BGA
|
| Package Equivalence Code |
BGA60,9X12,40/32
|
BGA60,9X12,40/32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
8192
|
8192
|
| Sequential Burst Length |
2,4,8
|
2,4,8
|
| Standby Current-Max |
0.005 A
|
0.005 A
|
| Supply Current-Max |
0.2 mA
|
0.405 mA
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare K4H511638J-BLB3T with alternatives
Compare MT46V32M16FN-6L:D with alternatives