MT46V32M16FN-6L:D vs K4H511638F-HCB3 feature comparison

MT46V32M16FN-6L:D Micron Technology Inc

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K4H511638F-HCB3 Samsung Semiconductor

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Time-Max 0.7 ns 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz 166 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code R-PBGA-B60 R-PBGA-B60
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR1 DRAM DDR1 DRAM
Memory Width 16 16
Moisture Sensitivity Level 1 3
Number of Terminals 60 60
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 32MX16 32MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA BGA
Package Equivalence Code BGA60,9X12,40/32 BGA60,9X12,40/32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Sequential Burst Length 2,4,8 2,4,8
Standby Current-Max 0.005 A 0.005 A
Supply Current-Max 0.405 mA 0.38 mA
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Base Number Matches 1 1
JESD-609 Code e1
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN SILVER COPPER

Compare MT46V32M16FN-6L:D with alternatives

Compare K4H511638F-HCB3 with alternatives