MT46V32M16FN-6L:D
vs
K4H511638F-HCB3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.28
8542.32.00.28
Access Time-Max
0.7 ns
0.7 ns
Clock Frequency-Max (fCLK)
166 MHz
166 MHz
I/O Type
COMMON
COMMON
Interleaved Burst Length
2,4,8
2,4,8
JESD-30 Code
R-PBGA-B60
R-PBGA-B60
Memory Density
536870912 bit
536870912 bit
Memory IC Type
DDR1 DRAM
DDR1 DRAM
Memory Width
16
16
Moisture Sensitivity Level
1
3
Number of Terminals
60
60
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
32MX16
32MX16
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
BGA
BGA
Package Equivalence Code
BGA60,9X12,40/32
BGA60,9X12,40/32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY
GRID ARRAY
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
8192
Sequential Burst Length
2,4,8
2,4,8
Standby Current-Max
0.005 A
0.005 A
Supply Current-Max
0.405 mA
0.38 mA
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
JESD-609 Code
e1
Peak Reflow Temperature (Cel)
260
Terminal Finish
TIN SILVER COPPER
Compare MT46V32M16FN-6L:D with alternatives
Compare K4H511638F-HCB3 with alternatives