K3N6C4000E-DC12
vs
GM23C32000-12
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
LG SEMICON CO LTD
|
Part Package Code |
DIP
|
|
Package Description |
DIP, DIP42,.6
|
|
Pin Count |
42
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.71
|
8542.32.00.71
|
Access Time-Max |
120 ns
|
120 ns
|
JESD-30 Code |
R-PDIP-T42
|
R-PDIP-T42
|
JESD-609 Code |
e0
|
e0
|
Length |
52.42 mm
|
|
Memory Density |
33554432 bit
|
33554432 bit
|
Memory IC Type |
MASK ROM
|
MASK ROM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
|
Number of Terminals |
42
|
42
|
Number of Words |
2097152 words
|
2097152 words
|
Number of Words Code |
2000000
|
2000000
|
Operating Mode |
ASYNCHRONOUS
|
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
2MX16
|
2MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
DIP
|
DIP
|
Package Equivalence Code |
DIP42,.6
|
DIP42,.6
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
5.08 mm
|
|
Standby Current-Max |
0.00005 A
|
0.0001 A
|
Supply Current-Max |
0.05 mA
|
0.06 mA
|
Supply Voltage-Max (Vsup) |
5.5 V
|
|
Supply Voltage-Min (Vsup) |
4.5 V
|
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
2.54 mm
|
Terminal Position |
DUAL
|
DUAL
|
Width |
15.24 mm
|
|
Base Number Matches |
1
|
3
|
|
|
|
Compare K3N6C4000E-DC12 with alternatives