K3N6C4000E-DC12 vs GM23C32000-12 feature comparison

K3N6C4000E-DC12 Samsung Semiconductor

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GM23C32000-12 SK Hynix Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code DIP
Package Description DIP, DIP42,.6
Pin Count 42
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 120 ns 250 ns
JESD-30 Code R-PDIP-T42 R-PDIP-T42
JESD-609 Code e0 e0
Length 52.42 mm
Memory Density 33554432 bit 2097152 bit
Memory IC Type MASK ROM MASK ROM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 42 42
Number of Words 2097152 words 2097152 words
Number of Words Code 2000000 2000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 2MX16 128KX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP42,.6 DIP42,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.08 mm
Standby Current-Max 0.00005 A 0.0001 A
Supply Current-Max 0.05 mA 0.06 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm
Base Number Matches 1 3

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