K3N5V1000E-DC120 vs K3N5V1000F-DC12 feature comparison

K3N5V1000E-DC120 Samsung Semiconductor

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K3N5V1000F-DC12 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIP DIP
Package Description DIP, DIP, DIP42,.6
Pin Count 42 42
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 120 ns 120 ns
Alternate Memory Width 8 8
JESD-30 Code R-PDIP-T42 R-PDIP-T42
Length 52.42 mm 52.42 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type MASK ROM MASK ROM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 42 42
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 1MX16 1MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.08 mm 5.08 mm
Supply Current-Max 0.04 mA 0.04 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15.24 mm 15.24 mm
Base Number Matches 1 1
JESD-609 Code e0
Package Equivalence Code DIP42,.6
Standby Current-Max 0.00003 A
Terminal Finish TIN LEAD

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Compare K3N5V1000F-DC12 with alternatives