K3N5V1000E-DC12
vs
K3P5V1000F-DC120
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
DIP
DIP
Package Description
DIP, DIP42,.6
DIP,
Pin Count
42
42
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.71
8542.32.00.71
Access Time-Max
120 ns
120 ns
Alternate Memory Width
8
8
JESD-30 Code
R-PDIP-T42
R-PDIP-T42
JESD-609 Code
e0
Length
52.42 mm
52.42 mm
Memory Density
16777216 bit
16777216 bit
Memory IC Type
MASK ROM
MASK ROM
Memory Width
16
16
Number of Functions
1
1
Number of Terminals
42
42
Number of Words
1048576 words
1048576 words
Number of Words Code
1000000
1000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
1MX16
1MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Equivalence Code
DIP42,.6
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
5.08 mm
5.08 mm
Standby Current-Max
0.00003 A
Supply Current-Max
0.04 mA
0.06 mA
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
3 V
3 V
Supply Voltage-Nom (Vsup)
3.3 V
3.3 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
15.24 mm
15.24 mm
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare K3N5V1000E-DC12 with alternatives
Compare K3P5V1000F-DC120 with alternatives