JANTXV2N6847
vs
IRFF9220
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
INTERSIL CORP
Package Description
HERMETIC SEALED, TO-39, 3 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
180 mJ
290 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
2.5 A
2.5 A
Drain-source On Resistance-Max
1.725 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
10 A
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/563
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Case Connection
DRAIN
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
20 W
Terminal Finish
Tin/Lead (Sn/Pb)
Compare JANTXV2N6847 with alternatives
Compare IRFF9220 with alternatives