JANTXV2N6847
vs
IRFF9220-JQR-B
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
SEMELAB LTD
|
Package Description |
HERMETIC SEALED, TO-39, 3 PIN
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
180 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
2.5 A
|
2.5 A
|
Drain-source On Resistance-Max |
1.725 Ω
|
1.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
10 A
|
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/563
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
2
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
Part Package Code |
|
BCY
|
Pin Count |
|
2
|
|
|
|
Compare JANTXV2N6847 with alternatives
Compare IRFF9220-JQR-B with alternatives