JANTXV2N6800
vs
IRFF331
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
UNITRODE CORP
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
350 V
Drain Current-Max (ID)
3 A
3.5 A
Drain-source On Resistance-Max
1 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
80 pF
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
25 W
25 W
Pulsed Drain Current-Max (IDM)
14 A
14 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
90 ns
90 ns
Turn-on Time-Max (ton)
65 ns
65 ns
Base Number Matches
1
2
Rohs Code
Case Connection
DRAIN
JESD-609 Code
e0
Power Dissipation-Max (Abs)
25 W
Terminal Finish
TIN LEAD
Compare JANTXV2N6800 with alternatives
Compare IRFF331 with alternatives