IRFF331
vs
2N6800
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERSIL CORP
MICROSEMI CORP
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
3.5 A
3 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
25 W
25 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Base Number Matches
6
11
Package Description
HERMETIC SEALED, TO-39, 3 PIN
Case Connection
DRAIN
DS Breakdown Voltage-Min
400 V
Drain-source On Resistance-Max
1.1 Ω
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
Number of Terminals
3
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Terminal Form
WIRE
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare 2N6800 with alternatives