JANTXV2N6800
vs
2N6800TX
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERNATIONAL RECTIFIER CORP
Package Description
HERMETIC SEALED, TO-205AF, 3 PIN
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
HIGH RELIABILITY
RADIATION HARDENED
Avalanche Energy Rating (Eas)
0.51 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
3 A
3 A
Drain-source On Resistance-Max
1.1 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
14 A
14 A
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/557
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Compare JANTXV2N6800 with alternatives
Compare 2N6800TX with alternatives