JANTXV2N6760
vs
IRF320
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
INFINEON TECHNOLOGIES AG
Package Description
FORMERLY TO-3, 2 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
5.5 A
3.3 A
Drain-source On Resistance-Max
1 Ω
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
8 A
13 A
Qualification Status
Qualified
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
63
Rohs Code
Samacsys Manufacturer
Infineon
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
50 W
Terminal Finish
TIN LEAD
Compare JANTXV2N6760 with alternatives
Compare IRF320 with alternatives