JANTXV2N6756
vs
IRF130-JQR-BR1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
HARRIS SEMICONDUCTOR
SEMELAB LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
14 A
45 A
Drain-source On Resistance-Max
0.18 Ω
0.21 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
150 pF
JEDEC-95 Code
TO-204AA
TO-3
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Pulsed Drain Current-Max (IDM)
30 A
56 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Finish
NOT SPECIFIED
TIN SILVER COPPER
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
105 ns
Base Number Matches
1
1
Pbfree Code
Rohs Code
Package Description
FLANGE MOUNT, O-MBFM-P2
Avalanche Energy Rating (Eas)
75 mJ
JESD-609 Code
e1
Compare JANTXV2N6756 with alternatives
Compare IRF130-JQR-BR1 with alternatives