IRF130-JQR-BR1 vs 2N6756E3 feature comparison

IRF130-JQR-BR1 TT Electronics Resistors

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2N6756E3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TT ELECTRONICS PLC MICROSEMI CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 75 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 45 A 14 A
Drain-source On Resistance-Max 0.21 Ω 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3 TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e1 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A 56 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish TIN SILVER COPPER MATTE TIN
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Package Description FLANGE MOUNT, O-MBFM-P2
Additional Feature HIGH RELIABILITY

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