JANTXV2N4957
vs
BFG590W/X
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
PHILIPS SEMICONDUCTORS
|
Part Package Code |
TO-72
|
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
ISOLATED
|
|
Collector Current-Max (IC) |
0.03 A
|
0.2 A
|
Collector-Base Capacitance-Max |
0.8 pF
|
|
Collector-Emitter Voltage-Max |
30 V
|
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
10
|
60
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
JEDEC-95 Code |
TO-72
|
|
JESD-30 Code |
O-MBCY-W4
|
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
|
Operating Temperature-Max |
200 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
METAL
|
|
Package Shape |
ROUND
|
|
Package Style |
CYLINDRICAL
|
|
Polarity/Channel Type |
PNP
|
NPN
|
Power Dissipation-Max (Abs) |
0.2 W
|
0.5 W
|
Power Gain-Min (Gp) |
17 dB
|
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500/426
|
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
WIRE
|
|
Terminal Position |
BOTTOM
|
|
Transistor Application |
AMPLIFIER
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
3
|
2
|
Package Description |
|
,
|
|
|
|
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