JANTXV1N914
vs
1N914116
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
NXP SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
Additional Feature
METALLURGICALLY BONDED
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
1 V
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
Non-rep Pk Forward Current-Max
1 A
4 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
Output Current-Max
0.075 A
0.075 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.25 W
0.25 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/116
Reverse Current-Max
0.5 µA
5 µA
Reverse Recovery Time-Max
0.004 µs
0.008 µs
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
11
1
Package Description
O-LALF-W2
ECCN Code
EAR99
HTS Code
8541.10.00.70
Rep Pk Reverse Voltage-Max
100 V
Compare JANTXV1N914 with alternatives
Compare 1N914116 with alternatives