JANTXV1N914 vs 1N914B feature comparison

JANTXV1N914 Microsemi Corporation

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1N914B Toshiba America Electronic Components

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP TOSHIBA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 0.62 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 1 A 2 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.075 A 0.15 A
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.25 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/116
Reverse Current-Max 0.5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 6 1
Part Package Code DO-35
Package Description DO-35, 2 PIN
Pin Count 2
Rep Pk Reverse Voltage-Max 100 V

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