JANTXV1N6131
vs
SP6131
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
AMPLIFONIX
Reach Compliance Code
compliant
unknown
Breakdown Voltage-Min
99.275 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
Number of Elements
1
Number of Terminals
2
Package Body Material
UNSPECIFIED
Package Shape
ROUND
Package Style
LONG FORM
Polarity
BIDIRECTIONAL
Power Dissipation-Max
3 W
Qualification Status
Qualified
Surface Mount
NO
Technology
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
Terminal Position
AXIAL
Base Number Matches
8
3
Additional Feature
I/P POWER-MAX (PEAK)=27DBM
Characteristic Impedance
50 Ω
Construction
COMPONENT
Gain
9 dB
Input Power-Max (CW)
13 dBm
Operating Frequency-Max
500 MHz
Operating Frequency-Min
10 MHz
Operating Temperature-Max
85 °C
Operating Temperature-Min
-55 °C
RF/Microwave Device Type
WIDE BAND LOW POWER
VSWR-Max
2
Compare JANTXV1N6131 with alternatives