JANTXV1N6131
vs
JANTX1N6131A
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SENSITRON SEMICONDUCTOR
Reach Compliance Code
compliant
compliant
Breakdown Voltage-Min
99.275 V
104.5 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-LALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
Qualification Status
Qualified
Qualified
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
8
8
ECCN Code
EAR99
HTS Code
8541.10.00.50
Clamping Voltage-Max
151.3 V
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
83.6 V
Reverse Current-Max
1 µA
Compare JANTXV1N6131 with alternatives
Compare JANTX1N6131A with alternatives