JANTXV1N6121A vs JANTX1N6121A feature comparison

JANTXV1N6121A Bkc Semiconductors Inc

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JANTX1N6121A Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Transferred Active
Ihs Manufacturer BKC SEMICONDUCTORS INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 38.7 V 40.9 V
Breakdown Voltage-Nom 43 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 62 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 33 V 32.7 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 9
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Factory Lead Time 25 Weeks
Samacsys Manufacturer Microchip
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 3 W
Reference Standard MIL-19500/516

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