JANTX1N6121A
vs
P6KE43HB0
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
O-PALF-W2
Reach Compliance Code
compliant
compliant
Factory Lead Time
25 Weeks
Samacsys Manufacturer
Microchip
Additional Feature
HIGH RELIABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min
40.9 V
38.7 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Qualified
Reference Standard
MIL-19500/516
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
32.7 V
34.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
47.3 V
Breakdown Voltage-Nom
43 V
Clamping Voltage-Max
61.9 V
JEDEC-95 Code
DO-204AC
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
10
Compare JANTX1N6121A with alternatives
Compare P6KE43HB0 with alternatives