JANTXV1N6112AUS vs 1N6112AUSE3 feature comparison

JANTXV1N6112AUS Semtech Corporation

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1N6112AUSE3 Microsemi Corporation

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SEMTECH CORP MICROSEMI CORP
Package Description HERMETIC SEALED, SURFACE MOUNT PACKAGE-2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 30 Weeks
Breakdown Voltage-Min 17.1 V
Breakdown Voltage-Nom 18 V 17.1 V
Case Connection ISOLATED
Clamping Voltage-Max 26.5 V 25.1 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XELF-N2 O-LELF-R2
Non-rep Peak Rev Power Dis-Max 500 W
Number of Elements 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.5 W
Qualification Status Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 13.7 V 13.7 V
Surface Mount YES YES
Technology ZENER
Terminal Form NO LEAD WRAP AROUND
Terminal Position END END
Base Number Matches 1 1
Rohs Code Yes

Compare JANTXV1N6112AUS with alternatives

Compare 1N6112AUSE3 with alternatives