JANTXV1N6112AUS vs JANS1N6112AUS feature comparison

JANTXV1N6112AUS Bkc Semiconductors Inc

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JANS1N6112AUS Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Transferred Active
Ihs Manufacturer BKC SEMICONDUCTORS INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 17.1 V 17.1 V
Breakdown Voltage-Nom 18 V
Case Connection ISOLATED
Clamping Voltage-Max 26.5 V 25.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-MELF-R2 O-LELF-R2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 2 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-19500/516 MIL-19500
Rep Pk Reverse Voltage-Max 14 V 13.7 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 8 7
Package Description MELF-2
Factory Lead Time 32 Weeks
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Reverse Current-Max 1 µA
Reverse Test Voltage 13.7 V

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