JANTXV1N6107
vs
JANTX1N6131
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMICON COMPONENTS INC
SEMICON COMPONENTS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
9.9275 V
99.275 V
Breakdown Voltage-Nom
11 V
110 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
16.38 V
158.865 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-XALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
MIL-19500/516
Rep Pk Reverse Voltage-Max
8.4 V
83.6 V
Reverse Current-Max
20 µA
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
8
Compare JANTXV1N6107 with alternatives
Compare JANTX1N6131 with alternatives