JANTXV1N6105 vs JANTXV1N6150A feature comparison

JANTXV1N6105 Bkc Semiconductors Inc

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JANTXV1N6150A Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer BKC SEMICONDUCTORS INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 8.2175 V 20.9 V
Breakdown Voltage-Nom 9.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 13.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 6.9 V 16.7 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 2
Factory Lead Time 25 Weeks
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Reference Standard MIL-19500

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Compare JANTXV1N6150A with alternatives