JANTXV1N6105
vs
JANTXV1N6150A
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
BKC SEMICONDUCTORS INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Min
8.2175 V
20.9 V
Breakdown Voltage-Nom
9.1 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
13.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Qualification Status
Not Qualified
Qualified
Rep Pk Reverse Voltage-Max
6.9 V
16.7 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
4
2
Factory Lead Time
25 Weeks
Additional Feature
HIGH RELIABILITY
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Reference Standard
MIL-19500
Compare JANTXV1N6105 with alternatives
Compare JANTXV1N6150A with alternatives