JANTXV1N5557
vs
1N6475
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
MICROSS COMPONENTS
Reach Compliance Code
compliant
unknown
Category CO2 Kg
8.54
Compliance Temperature Grade
Military: -65C to +175C
Candidate List Date
2018-01-15
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.22
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
54 V
43.7 V
Case Connection
CATHODE
ISOLATED
Clamping Voltage-Max
78.5 V
63.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
JESD-30 Code
O-XALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
49 V
40 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
10
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Factory Lead Time
27 Weeks
Breakdown Voltage-Nom
44 V
Qualification Status
Not Qualified
Compare JANTXV1N5557 with alternatives
Compare 1N6475 with alternatives