1N6475
vs
P6KE56C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
BKC SEMICONDUCTORS INC
VIKING TECH CORP
Reach Compliance Code
unknown
unknown
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Min
43.7 V
50.4 V
Breakdown Voltage-Nom
44 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
63.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
1500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
40 V
45.6 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
11
65
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
61.6 V
JEDEC-95 Code
DO-15
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