JANTX2N7335
vs
JANTXV2N7335
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
DEFENSE LOGISTICS AGENCY
Package Description
HERMETIC SEALED, MO-036AB, 14 PIN
HERMETIC SEALED, MO-036AB, 14 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
Qualifications
DLA
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
75 mJ
75 mJ
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
0.75 A
0.75 A
Drain-source On Resistance-Max
1.73 Ω
1.73 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MO-036AB
MO-036AB
JESD-30 Code
R-CDIP-T14
R-CDIP-T14
Number of Elements
4
4
Number of Terminals
14
14
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
3 A
3 A
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500/599
MIL-19500/599
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1