JANTX2N7218U
vs
2N7218UR4
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
TT ELECTRONICS PLC
Package Description
CHIP CARRIER, R-CBCC-N3
CHIP CARRIER, R-XBCC-N3
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
250 mJ
250 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
28 A
28 A
Drain-source On Resistance-Max
0.125 Ω
0.125 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CBCC-N3
R-XBCC-N3
JESD-609 Code
e0
e4
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
112 A
112 A
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/596
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
GOLD
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
JEDEC-95 Code
TO-276AB
Compare JANTX2N7218U with alternatives
Compare 2N7218UR4 with alternatives