Part Details for 2N7218UR4 by TT Electronics Resistors
Overview of 2N7218UR4 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2N7218UR4
2N7218UR4 CAD Models
2N7218UR4 Part Data Attributes
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2N7218UR4
TT Electronics Resistors
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Datasheet
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2N7218UR4
TT Electronics Resistors
Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | CHIP CARRIER, R-XBCC-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-276AB | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7218UR4
This table gives cross-reference parts and alternative options found for 2N7218UR4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7218UR4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTX2N7218 | Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Infineon Technologies AG | 2N7218UR4 vs JANTX2N7218 |
| IRFM150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | 2N7218UR4 vs IRFM150 |
| IRFN140R4 | Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | 2N7218UR4 vs IRFN140R4 |
| JANTXV2N7218 | Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Omnirel Corp | 2N7218UR4 vs JANTXV2N7218 |
| IRFN150SMD-JQR-BR4 | 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N7218UR4 vs IRFN150SMD-JQR-BR4 |
| SNLC150 | Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PAK1, 3 PIN | Silicon Transistor Corporation | 2N7218UR4 vs SNLC150 |
| JANHCA2N7218 | Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | 2N7218UR4 vs JANHCA2N7218 |
| JANTXV2N7224 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Omnirel Corp | 2N7218UR4 vs JANTXV2N7224 |
| SFF75N10MTXV | Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solid State Devices Inc (SSDI) | 2N7218UR4 vs SFF75N10MTXV |
| SFF75N10MUBS | Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solid State Devices Inc (SSDI) | 2N7218UR4 vs SFF75N10MUBS |