JANTXV2N6792
vs
2N6792TX
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Transferred
Ihs Manufacturer
SEMICOA CORP
HARRIS SEMICONDUCTOR
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
0.242 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
2 A
2 A
Drain-source On Resistance-Max
1.9 Ω
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
10 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
4
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
Feedback Cap-Max (Crss)
40 pF
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
20 W
Turn-off Time-Max (toff)
95 ns
Turn-on Time-Max (ton)
75 ns
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