JANTX2N6792
vs
JANTX2N6792
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERSIL CORP
Package Description
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
RADIATION HARDENED
Avalanche Energy Rating (Eas)
0.242 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
2 A
2 A
Drain-source On Resistance-Max
1.9 Ω
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
20 W
Pulsed Drain Current-Max (IDM)
10 A
10 A
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/555
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Case Connection
DRAIN
Compare JANTX2N6792 with alternatives
Compare JANTX2N6792 with alternatives