JANTX2N6790
vs
JAN2N6790
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
SEMICOA CORP
DEFENSE LOGISTICS AGENCY
Package Description
HERMETIC SEALED, TO-39, 3 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
0.242 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
3.5 A
3.5 A
Drain-source On Resistance-Max
0.85 Ω
0.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
TO-205AF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
14 A
14 A
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500
MIL-19500
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
7
2
HTS Code
8541.21.00.95
Case Connection
DRAIN
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Power Dissipation Ambient-Max
0.8 W
Power Dissipation-Max (Abs)
20 W
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
90 ns
Compare JANTX2N6790 with alternatives
Compare JAN2N6790 with alternatives