JANTX2N6768
vs
IRF350
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
INTERSIL CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
200 pF
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Pulsed Drain Current-Max (IDM)
25 A
Qualification Status
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
225 ns
Turn-on Time-Max (ton)
100 ns
Base Number Matches
10
22
Rohs Code
JESD-609 Code
e0
Power Dissipation-Max (Abs)
150 W
Terminal Finish
Tin/Lead (Sn/Pb)
Compare JANTX2N6768 with alternatives
Compare IRF350 with alternatives