JANTX2N3866A vs 2N3866 feature comparison

JANTX2N3866A Raytheon Semiconductor

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2N3866 Diodes Incorporated

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR ZETEX PLC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
JEDEC-95 Code TO-39 TO-39
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Qualification Status Not Qualified Not Qualified
Reference Standard MIL
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Package Description CYLINDRICAL, O-MBCY-W3
Collector Current-Max (IC) 0.4 A
Collector-Base Capacitance-Max 3 pF
Collector-Emitter Voltage-Max 30 V
DC Current Gain-Min (hFE) 15
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-609 Code e0
Operating Temperature-Max 200 °C
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 5 W
Power Gain-Min (Gp) 8.5 dB
Terminal Finish TIN LEAD
Time@Peak Reflow Temperature-Max (s) 10
Transition Frequency-Nom (fT) 200 MHz

Compare JANTX2N3866A with alternatives

Compare 2N3866 with alternatives