JANTX2N3700
vs
JANTXV2N3700
feature comparison
Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
Ihs Manufacturer |
RAYTHEON SEMICONDUCTOR
|
SEMICOA CORP
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
JEDEC-95 Code |
TO-18
|
TO-18
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
NPN
|
NPN
|
Qualification Status |
Not Qualified
|
Qualified
|
Reference Standard |
MIL
|
MIL-19500/391
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
AMPLIFIER
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Rohs Code |
|
No
|
Part Package Code |
|
BCY
|
Package Description |
|
HERMETIC SEALED, METAL CAN-3
|
Pin Count |
|
3
|
Samacsys Manufacturer |
|
Semicoa Semiconductors
|
Collector Current-Max (IC) |
|
1 A
|
Collector-Emitter Voltage-Max |
|
80 V
|
DC Current Gain-Min (hFE) |
|
15
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
200 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Power Dissipation-Max (Abs) |
|
0.5 W
|
Terminal Finish |
|
TIN LEAD
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transition Frequency-Nom (fT) |
|
100 MHz
|
|
|
|
Compare JANTX2N3700 with alternatives
Compare JANTXV2N3700 with alternatives