JANTX2N2857 vs BFG67/X feature comparison

JANTX2N2857 Microsemi Corporation

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BFG67/X NXP Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP NXP SEMICONDUCTORS
Package Description HERMETIC SEALED, METAL CAN-4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.04 A 0.05 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 15 V 10 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 60
Highest Frequency Band ULTRA HIGH FREQUENCY BAND L BAND
JEDEC-95 Code TO-72
JESD-30 Code O-MBCY-W4 R-PDSO-G4
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 200 °C 175 °C
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.2 W 0.3 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/343 CECC
Surface Mount NO YES
Terminal Finish TIN LEAD TIN
Terminal Form WIRE GULL WING
Terminal Position BOTTOM DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 7 3
Pbfree Code Yes
Part Package Code SOT-143
Pin Count 4
Additional Feature HIGH RELIABILITY
Case Connection COLLECTOR
Moisture Sensitivity Level NOT APPLICABLE
Peak Reflow Temperature (Cel) 260
Power Dissipation Ambient-Max 0.3 W
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transition Frequency-Nom (fT) 8000 MHz

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