JANTX1N6639US
vs
BAX18136
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
VPT COMPONENTS
|
NXP SEMICONDUCTORS
|
| Package Description |
MELF-2
|
O-LALF-W2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Application |
ULTRA FAST RECOVERY
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
|
| JESD-30 Code |
O-LELF-R2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.5 A
|
0.5 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
|
| Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
| Reverse Current-Max |
0.1 µA
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.05 µs
|
| Reverse Test Voltage |
75 V
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
WRAP AROUND
|
WIRE
|
| Terminal Position |
END
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
DO-35
|
| Power Dissipation-Max |
|
0.45 W
|
|
|
|
Compare JANTX1N6639US with alternatives
Compare BAX18136 with alternatives