JANTX1N6508
vs
MV1N6508
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
MICROSEMI CORP
|
Package Description |
CERAMIC, DIP-14
|
R-CDIP-T14
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.50
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY, LOW CAPACITANCE
|
Configuration |
COMPLEX
|
COMPLEX
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
Forward Voltage-Max (VF) |
1 V
|
|
JEDEC-95 Code |
TO-116
|
|
JESD-30 Code |
R-XDIP-T14
|
R-CDIP-T14
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
16
|
16
|
Number of Terminals |
14
|
14
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Output Current-Max |
0.3 A
|
|
Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Power Dissipation-Max |
0.6 W
|
0.6 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/474
|
|
Rep Pk Reverse Voltage-Max |
60 V
|
|
Reverse Current-Max |
0.1 µA
|
|
Reverse Recovery Time-Max |
0.02 µs
|
|
Reverse Test Voltage |
40 V
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
9
|
1
|
Part Package Code |
|
DIP
|
Pin Count |
|
14
|
Breakdown Voltage-Min |
|
60 V
|
Polarity |
|
UNIDIRECTIONAL
|
Technology |
|
AVALANCHE
|
|
|
|
Compare JANTX1N6508 with alternatives
Compare MV1N6508 with alternatives