JANTX1N6508
vs
MV1N6508
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
MICROSEMI CORP
Package Description
CERAMIC, DIP-14
R-CDIP-T14
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.50
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY, LOW CAPACITANCE
Configuration
COMPLEX
COMPLEX
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
1 V
JEDEC-95 Code
TO-116
JESD-30 Code
R-XDIP-T14
R-CDIP-T14
JESD-609 Code
e0
e0
Number of Elements
16
16
Number of Terminals
14
14
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
0.3 A
Package Body Material
UNSPECIFIED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Power Dissipation-Max
0.6 W
0.6 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/474
Rep Pk Reverse Voltage-Max
60 V
Reverse Current-Max
0.1 µA
Reverse Recovery Time-Max
0.02 µs
Reverse Test Voltage
40 V
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
9
1
Part Package Code
DIP
Pin Count
14
Breakdown Voltage-Min
60 V
Polarity
UNIDIRECTIONAL
Technology
AVALANCHE
Compare JANTX1N6508 with alternatives
Compare MV1N6508 with alternatives