JANTX1N6508 vs MV1N6508 feature comparison

JANTX1N6508 National Semiconductor Corporation

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MV1N6508 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP MICROSEMI CORP
Package Description CERAMIC, DIP-14 R-CDIP-T14
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY, LOW CAPACITANCE
Configuration COMPLEX COMPLEX
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code TO-116
JESD-30 Code R-XDIP-T14 R-CDIP-T14
JESD-609 Code e0 e0
Number of Elements 16 16
Number of Terminals 14 14
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.3 A
Package Body Material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Power Dissipation-Max 0.6 W 0.6 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/474
Rep Pk Reverse Voltage-Max 60 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.02 µs
Reverse Test Voltage 40 V
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 9 1
Part Package Code DIP
Pin Count 14
Breakdown Voltage-Min 60 V
Polarity UNIDIRECTIONAL
Technology AVALANCHE

Compare JANTX1N6508 with alternatives

Compare MV1N6508 with alternatives