JANTX1N6118A vs P4KE350C feature comparison

JANTX1N6118A Semicon Components Inc

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P4KE350C Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMICON COMPONENTS INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 31.4 V 315 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 45.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516 UL RECOGNIZED
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 9
Rohs Code No
Package Description PLASTIC PACKAGE-2
Breakdown Voltage-Max 385 V
JEDEC-95 Code DO-41
Moisture Sensitivity Level 1
Rep Pk Reverse Voltage-Max 284 V

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