JANTX1N6118A vs 1N6118AE3 feature comparison

JANTX1N6118A Bkc Semiconductors Inc

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1N6118AE3 Microchip Technology Inc

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Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer BKC SEMICONDUCTORS INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 29.7 V 31.4 V
Breakdown Voltage-Nom 33 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 47.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 25 V 25.1 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 2
Package Description ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2
Factory Lead Time 21 Weeks
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 2 W

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