JANTX1N6118A vs BZW06-28B feature comparison

JANTX1N6118A Microchip Technology Inc

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BZW06-28B Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description HERMETIC SEALED, GLASS, E, 2 PIN
Reach Compliance Code compliant not_compliant
Factory Lead Time 25 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 29.7 V 31.4 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2 W 1.7 W
Qualification Status Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 25.1 V 28.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD Matte Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 12
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Breakdown Voltage-Max 34.7 V
JEDEC-95 Code DO-15
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

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Compare BZW06-28B with alternatives