JANTX1N5622
vs
1N5622
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
MICROSEMI CORP
|
CENTRAL SEMICONDUCTOR CORP
|
Package Description |
HERMETIC SEALED, GLASS, A PACKAGE-2
|
GPR-1A, 2 PIN
|
Pin Count |
2
|
2
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Samacsys Manufacturer |
Microsemi Corporation
|
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JESD-30 Code |
O-LALF-W2
|
E-XALF-W2
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Operating Temperature-Min |
-65 °C
|
|
Output Current-Max |
1 A
|
1 A
|
Package Body Material |
GLASS
|
UNSPECIFIED
|
Package Shape |
ROUND
|
ELLIPTICAL
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500
|
|
Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
Reverse Recovery Time-Max |
2 µs
|
2 µs
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
3
|
11
|
Manufacturer Package Code |
|
GPR-1A
|
Forward Voltage-Max (VF) |
|
1.2 V
|
Non-rep Pk Forward Current-Max |
|
50 A
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JANTX1N5622 with alternatives
Compare 1N5622 with alternatives