JANSH2N7262
vs
IRHF7230PBF
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Yes
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INFINEON TECHNOLOGIES AG
Package Description
CYLINDRICAL, O-MBCY-W3
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
compliant
compliant
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
RADIATION HARDENED
Avalanche Energy Rating (Eas)
240 mJ
240 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
5.5 A
5.5 A
Drain-source On Resistance-Max
0.36 Ω
0.36 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-39
TO-39
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
0.8 W
Pulsed Drain Current-Max (IDM)
22 A
22 A
Qualification Status
Not Qualified
Reference Standard
MIL-19500/601
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
93 ns
Turn-on Time-Max (ton)
80 ns
Base Number Matches
1
1
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare JANSH2N7262 with alternatives
Compare IRHF7230PBF with alternatives