JANSH2N7262
vs
JANKCAH2N7262
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INFINEON TECHNOLOGIES AG
Package Description
CYLINDRICAL, O-MBCY-W3
DIE-3
Reach Compliance Code
compliant
not_compliant
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
RADIATION HARDENED
Avalanche Energy Rating (Eas)
240 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
5.5 A
5.5 A
Drain-source On Resistance-Max
0.36 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-39
JESD-30 Code
O-MBCY-W3
R-XUUC-N3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
UNCASED CHIP
Polarity/Channel Type
N-CHANNEL
N-CHANNEL AND P-CHANNEL
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
0.8 W
0.8 W
Pulsed Drain Current-Max (IDM)
22 A
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/601
MIL-19500/657A
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
NO LEAD
Terminal Position
BOTTOM
UPPER
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
93 ns
Turn-on Time-Max (ton)
80 ns
Base Number Matches
2
1
ECCN Code
EAR99
Case Connection
DRAIN
Compare JANSH2N7262 with alternatives
Compare JANKCAH2N7262 with alternatives