JANSH2N7262
vs
2N7262
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MICROSEMI CORP
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
3A001.A.1.A
|
EAR99
|
Additional Feature |
RADIATION HARDENED
|
|
Avalanche Energy Rating (Eas) |
240 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
5.5 A
|
5.5 A
|
Drain-source On Resistance-Max |
0.36 Ω
|
0.6 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-39
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.8 W
|
|
Pulsed Drain Current-Max (IDM) |
22 A
|
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/601
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
13
|
Part Package Code |
|
BCY
|
Pin Count |
|
2
|
Case Connection |
|
DRAIN
|
|
|
|
Compare JANSH2N7262 with alternatives
Compare 2N7262 with alternatives