Part Details for 2N7262 by Microsemi Corporation
Overview of 2N7262 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2N7262
2N7262 CAD Models
2N7262 Part Data Attributes
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2N7262
Microsemi Corporation
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Datasheet
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2N7262
Microsemi Corporation
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | BCY | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for 2N7262
This table gives cross-reference parts and alternative options found for 2N7262. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7262, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRHF7230 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | International Rectifier | 2N7262 vs IRHF7230 |
IRHF7230PBF | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | International Rectifier | 2N7262 vs IRHF7230PBF |
JANSR2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | Infineon Technologies AG | 2N7262 vs JANSR2N7262 |
IRHF7230PBF | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | Infineon Technologies AG | 2N7262 vs IRHF7230PBF |
JANSH2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | Infineon Technologies AG | 2N7262 vs JANSH2N7262 |
2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | 2N7262 vs 2N7262 |
JANSH2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | International Rectifier | 2N7262 vs JANSH2N7262 |
JANSG2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | Infineon Technologies AG | 2N7262 vs JANSG2N7262 |
IRHF8230 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | Infineon Technologies AG | 2N7262 vs IRHF8230 |
JANSG2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | International Rectifier | 2N7262 vs JANSG2N7262 |