JANS1N6115A vs 1N6115 feature comparison

JANS1N6115A Microsemi Corporation

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1N6115 Microsemi Corporation

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS, E, 2 PIN HERMETIC SEALED, GLASS, E PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 22.8 V 22.8 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2 W 2 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 18.2 V 18.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 29
Samacsys Manufacturer Microsemi Corporation
Breakdown Voltage-Nom 24 V
Clamping Voltage-Max 34.7 V

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Compare 1N6115 with alternatives