JANHCA2N6766
vs
2N6766-QR-B
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
TT ELECTRONICS PLC
|
Package Description |
DIE-3
|
FLANGE MOUNT, O-MBFM-P2
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
500 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
30 A
|
30 A
|
Drain-source On Resistance-Max |
0.085 Ω
|
0.085 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-XUUC-N3
|
O-MBFM-P2
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
UNSPECIFIED
|
METAL
|
Package Shape |
SQUARE
|
ROUND
|
Package Style |
UNCASED CHIP
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
150 W
|
|
Pulsed Drain Current-Max (IDM) |
120 A
|
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/543G
|
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
NO LEAD
|
PIN/PEG
|
Terminal Position |
UPPER
|
BOTTOM
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
JEDEC-95 Code |
|
TO-3
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JANHCA2N6766 with alternatives
Compare 2N6766-QR-B with alternatives